? 2003 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 1000 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c 21 a i dm t c = 25 c, pulse width limited by t jm 84 a i ar t c = 25 c21a e ar t c = 25 c 60mj e as 2.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 520 w t j -55 to +150 c t jm 150 c t stg -55 to +150 c v isol 50/60 hz, rms t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.5/13 nm/lb.in. weight 30 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 1 ma 1000 v v gs(th) v ds = v gs , i d = 4 ma 3 5.0 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss 100 a v gs = 0 v t j = 125 c2ma r ds(on) v gs = 10 v, i d = 0.5 i d25 0.50 ? pulse test, t 300 s, duty cycle d 2 % hiperfet tm power mosfets q-class single mosfet die n-channel enhancement mode avalanche rated, low q g , high dv/dt v dss = 1000 v i d25 = 21 a r ds(on) = 0.50 ? ? ? ? ? t rr 250 ns ixfn 21n100q s g s d minibloc, sot-227 b (ixfn) e153432 features ? ixys advanced low q g process low gate charge and capacitances - easier to drive -faster switching unclamped inductive switching (uis) rated low r ds (on) fast intrinsic diode international standard package minibloc with aluminium nitride isolation for low thermal resistance low terminal inductance (<10 nh) and stray capacitance to heatsink (<35pf) molding epoxies meet ul 94 v-0 flammability classification applications dc-dc converters battery chargers switched-mode and resonant-mode power supplies dc choppers temperature and lighting controls advantages easy to mount space savings high power density g = gate d = drain s = source either source terminal at minibloc can be used as main or kelvin source ds98762b(01/03
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 ? i d25 , pulse test 16 22 s c iss 5900 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 550 pf c rss 90 pf t d(on) 21 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 18 ns 18 t d(off) r g = 1 ? (external) 60 n s t f 12 ns q g(on) 170 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 38 nc q gd 75 nc r thjc 0.24 k/w r thck 0.05 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 21 a i sm repetitive; pulse width limited by t jm 84 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr 250 ns q rm i f = i s , -di/dt = 100 a/ s, v r = 100 v 1.4 c i rm 8a minibloc, sot-227 b m4 screws (4x) supplied dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7.80 8.20 0.307 0.323 c 4.09 4.29 0.161 0.169 d 4.09 4.29 0.161 0.169 e 4.09 4.29 0.161 0.169 f 14.91 15.11 0.587 0.595 g 30.12 30.30 1.186 1.193 h 38.00 38.23 1.496 1.505 j 11.68 12.22 0.460 0.481 k 8.92 9.60 0.351 0.378 l 0.76 0.84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1.98 2.13 0.078 0.084 p 4.95 5.97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 0.155 0.174 s 4.72 4.85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004 ixfn 21n100q
? 2003 ixys all rights reserved v gs - volts 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 i d - amperes 0 4 8 12 16 20 24 t c - degrees c -50 -25 0 25 50 75 100 125 150 i d - amperes 0 5 10 15 20 25 t j - degrees c 25 50 75 100 125 150 r ds(on) - normalized 1.0 1.4 1.8 2.2 2.6 i d - amperes 0 102030 r ds(on) - normalized 0.8 1.2 1.6 2.0 2.4 2.8 v ds - volts 0 5 10 15 20 25 30 35 i d - amperes 0 5 10 15 20 25 30 t j = 125 o c 4v 4v 5v v gs = 9v 8v 7v 6v 5v t j = 25 o c v gs = 10v t j = 25 o c v ds - volts 0 5 10 15 20 i d - amperes 0 10 20 30 40 v gs = 9v 8v 7v 6v t j = 25 o c i d =21a i d =10.5a v gs = 10v t j = 125 o c t j = 125 o c ixfn 21n100q fig.2 output characteristics @ t j = 125c fig.4 temperature dependence of drain to source resistance fig.6 drain current vs gate source voltage fig.1 output characteristics @ t j = 25c fig.3 r ds(on) vs. drain current fig.5 drain current vs. case temperature
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 v sd - volts 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i d - amperes 0 15 30 45 60 75 90 pulse width - seconds 10 -4 10 -3 10 -2 10 -1 10 0 r(th) jc - k/w 0.001 0.010 0.100 1.000 v ds - volts 0 5 10 15 20 25 30 35 40 capacitance - pf 100 1000 10000 gate charge - nc 0 40 80 120 160 200 v gs - volts 0 2 4 6 8 10 crss coss v ds = 500 v i d = 21 a i g = 10 ma f = 100khz t j = 125 o c t j = 25 o c ciss 30000 60 ixfn 21n100q fig.7 gate charge characteristic curve fig.8 capacitance curves fig.9 drain current vs drain to source voltage fig.10 transient thermal impedance
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